ds30050 rev. 5 - 2 1 of 3 sbl6030pt - sbl6060pt www.diodes.com diodes incorporated sbl6030pt - sbl6060pt 60a schottky barrier rectifier features a b e g j l m n p q k s m h r d c to-3p dim min max a 1.88 2.08 b 4.87 5.13 c 21.25 21.75 d 19.60 20.10 e 2.10 2.40 g 0.51 0.76 h 15.75 16.25 j 1.93 2.18 k 2.90 3.20 l 3.78 4.38 m 5.20 5.70 n 1.12 1.22 p 1.90 2.16 q 2.93 3.22 r 11.70 12.80 s 4.40 typical all dimensions in mm maximum ratings and electrical characteristics @ t a = 25 c unless otherwise specified schottky barrier chip guard ring die construction for transient protection low power loss, high efficiency high surge capability high current capability and low forward voltage drop for use in low voltage, high frequency inverters, free wheeling, and polarity protection application lead free finish, rohs compliant (note 3) mechanical data case: to-3p case material: molded plastic. ul flammability classification rating 94v-0 moisture sensitivity: level 1 per j-std-020c terminals: finish - bright tin. solderable per mil-std-202, method 208 polarity: as marked on body ordering information: see last page marking: type number weight: 5.6 grams (approximate) single phase, half wave, 60hz, resistive or inductive load. for capacitive load, derate current by 20%. characteristic symbol sbl 6030pt sbl 6040pt sbl 6050pt sbl 6060pt unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 30 40 50 60 v rms reverse voltage v r(rms) 21 28 35 42 v average rectified output current @ t c = 100 c (note 1) i o 60 a non-repetitive peak forward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) i fsm 500 a forward voltage drop @ i f = 30a, t c = 25 c v fm 0.55 0.70 v peak reverse current @ t c = 25 c at rated dc blocking voltage @ t c = 100 c i rm 20 200 ma typical total capacitance (note 2) c t 1500 pf typical thermal resistance junction to case (note 1) r jc 0.5 c/w operating and storage temperature range t j, t stg -65 to +150 c notes: 1. thermal resistance junction to case mounted on heatsink. 2. measured at 1.0mhz and applied reverse voltage of 4.0v dc 3. rohs revision 13.2.2003. glass and high temperature solder exemptions applied, see eu directive annex notes 5 and 7.
ds30050 rev. 5 - 2 2 of 3 sbl6030pt - sbl6060pt www.diodes.com 0.1 1.0 10 100 0.2 0 0.4 0.6 0.8 1.0 i , instantaneous forward current (a) f v , instantaneous forward voltage (v) fi g .2 t y pical forward characteristics f sbl6030pt - sbl6040pt sbl6050pt - sbl6060pt 100 200 300 0 400 500 600 1 10 100 i , peak f o rward surge current (a) fsm number of cycles at 60hz fig. 3 max non-repetitive forward surge current 8.3ms single half-sine-wave jedec method 100 1000 10000 0.1 1.0 10 100 c,t o tal capacitance (pf) t v , reverse voltage (v) fig. 4 typical total capacitance per element r t=25c j 0.01 0.1 1.0 10 100 0204060 i , instantaneous reverse current (ma) r peak reverse voltage (v) fi g .5 t y pical reverse characteristics t = 100 c j 30 50 10 sbl6030/40pt sbl6050/60pt t=25c j sbl6030/40pt sbl6050/60pt 0 10 20 40 0 50 100 150 i , average forward current (a) (av) t , case temperature ( c) fi g . 1 forward current deratin g curve c 30 50 60 70 80
notes: 4. for packaging details, visit our website at http://www.diodes.com/datasheets/ap02008.pdf. ds30050 rev. 5 - 2 3 of 3 sbl6030pt - sbl6060pt www.diodes.com ordering information device packaging shipping sbl6030pt to-3p 30/tube sbl6040pt to-3p 30/tube sbl6050pt to-3p 30/tube sbl6060pt to-3p 30/tube (note 4)
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